Engineering the Electron–Hole Bilayer Tunneling Field-Effect Transistor
نویسندگان
چکیده
منابع مشابه
Engineering the Electron-Hole Bilayer Tunneling Field- Effect Transistor
The electron-hole (EH) Bilayer Tunneling FieldEffect Transistor promises to eliminate heavy-doping band-tails enabling a smaller subthreshold swing voltage. Nevertheless, the electrostatics of a thin structure must be optimized for gate efficiency. We analyze the tradeoff between gate efficiency versus on-state conductance to find the optimal device design. Once the EH Bilayer is optimized for ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2014
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2014.2312939